山东力冠微电子装备有限公司
  • 山东力冠
    参考报价:电议
    型号:坩埚下降设备
    产地:山东
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  • 详细介绍:


    产品概述/Product Introduction:

    ♦ 主要用于4-8英寸砷化镓、磷化铟等化合物单晶生长

    Mainly used for single crystal growth of 4-8 inches of gallium arsenide, indium phosphide and other compounds

    ♦ 设备由机架、安瓿支撑机构、加热器和控制系统组成

    The equipment consists of a rack, ampoule support mechanism, heater and control system

    ♦ 能够实现安瓿移动和转动的精确控制

    Accurate control of ampoule movement and rotation can be realized

     

    产品特点/Product Characteristics:

    ♦ 工业计算机控制系统(WINDOWS系统界面,操作方便简洁)

    Industrial computer control system (WINDOWS system interface, easy and concise operation)

    ♦ 关键部件均采用进口,确保设备的高可靠性

    The key parts are imported to ensure the high reliability of the equipment

    ♦ 控温精度高,温区控温稳定性好

    High temperature control precision and good temperature control stability in temperature zone

    ♦ 具有断电报警、超温、欠温报警、极限超温报警等多种安全保护功能

    lt has various safety protection functions such as power failure alarm, over-temperature alarm, under-tempera-ture alarm and extreme over-temperature alarm

    ♦ 速度可调的梯形波、三角波及正弦波等旋转功能

    Rotation functions such as trapezoidal wave, triangular wave and sine wave with adjustable speed

    ♦ 单晶质量高

    High quality single crystal

     

    技术指标/Technical Indicators

    晶片类型:4/6英寸

    Wafer type: 4/6 inches

    工作温度范围:1100℃

    Operating temperature range: 1100℃

    加热器**温度:1250°C

    Maximum heater temperature: 1250℃

    控温精度:土0.5℃

    Temperature control accuracy: 土0.5℃

    控温段数:4段

    Number of temperature control sections: 4 sections

    炉腔压力:4MPa

    Furnace chamber pressure: 4MPa

     

    应用范围/Scope:

    ♦ 广泛用于材料的绀蜗下降的单晶生长

    Bridgman-descending single crystal growth widely used in materials