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    2μm窄线宽激光器 EP2000-DM-B Series

    EP2000-DM-B是一个性价比高, 窄线宽,高度相干的激光光源.类似于DFB形式的**技术, 即:ridge waveguide technology and epistructure design is used to deliver an InP-based strained quantum-well laser diode source emitting at a wavelength of 2.0μm with high SMSR. The Discrete Mode laser diode chip is packaged in an industry standard, hermetically sealed 14 pin butterfly package with integrated optical isolator, thermo-electric cooler (TEC), monitor photodiode and thermistor.

    Key Features

    Applications

    Excellent reliability

    High performance gas sensing

    Mode-Hop free tuning >2nm

    Seed Laser

    Integrated optical isolator

    Narrow linewidth <2MHz

    Optical and electrical characteristics: (T = 25°C)

    PARAMETER

    SYMBOL

    MIN

    TYP

    MAX

    UNIT

    LASER DIODE

    Output Power in Fibre

    Pf

    1.5

    1.75

    2

    mW

    Centre Wavelength

    λcen

    1950

    2001

    2150

    nm

    Threshold Current

    Ith

    -

    20

    40

    mA

    Operating Current

    Iop

    -

    70

    120

    mA

    Forward Voltage

    Vf

    -

    1.3

    1.6

    V

    Side Mode Suppression Ratio

    SMSR

    30

    40

    -

    dB

    Temperature Tuning Coefficient

    -

    0.1

    -

    nm/K

    Current Tuning Coefficient

    -

    0.01

    -

    nm/mA

    Quantum Efficiency

    η

    0.02

    0.03

    -

    mW/mA

    Optical Isolation

    ISO

    40

    -

    dB

    MONITOR DIODE*

    Monitor Photo Current

    Im

    0.2

    0.4

    0.8

    mA

    Monitor Operating Voltage

    Vm

    -

    -

    5.5

    V

    Monitor Dark Current (at 5V VDR)

    Imd

    -

    -

    < 0.2

    μA

    Absolute Maximum Ratings (Tsub= 25°C)

    Parameter

    Symbol

    Ratings

    Units

    Laser diode reverse voltage

    VR

    2

    V

    Laser diode forward current

    IF

    120

    mA

    Photodiode reverse voltage

    VDR

    20

    V

    Peltier current

    IP

    1.2

    A

    Operating case temperature

    Tcase

    -20 to 65

    °C

    Storage temperature

    Tstg

    -40 to 85

    °C