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参考报价：电议 型号：
产地：美国 在线咨询
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■ KV104 Series HgCdTe Photodiodes
| ◆ High D* at high frequencies ◆ Sizes 2.0 mm to 0.05 mm ◆ Wavelength cutoff: 11.5， 8， 4.5 μm ◆ Linear ◆ Custom configurations available |
| Model* | Wavelength (µm) Peak/ Cutoff | Size(mm) | Bandwidth(Hz) | D*(60FOV) (Jones，typ) | Responsivity (Amps/Watt) |
| KV104-1-A-3/11 | 10.5 />11.5 | 1 x 1 | >20M | 3.00E+10 | >4 |
| KV104-1-A-3/12 | 11 />12.3 | 1 x 1 | >20M | 3.00E+10 | >4 |
| KV104-1-A-3/10 | 9/ >10 | 1 x 1 | >20M | 5.00E+10 | >4 |
| KV104-0.5-A-3/11 | 10.5/ >11.5 | 0.5 x 0.5 | >50M | 3.00E+10 | >4 |
| KV104-0.25-A-1/11 | 10.5/ >11.5 | 0.25x0.25 | >100M | 3.00E+10 | >4 |
| KV104-0.1-1-E/11 | 10.5 />11.5 | 0.1 x 0.1 | >500M | 3.00E+10 | >4 |
| KV104-0.5-A-2/8 | 7.2 />8 | 0.5 x 0.5 | >30M | 7.00E+10 | >3 |
| KV104-1-A-7/11/TS | 10.5 />11.5 | 1 x 1 | >20M | 3.00E+10 | >4 |
| KV104-1-A-5/11/TS | 10.5 />11.5 | 1 x 1 | >20M | 3.00E+10 | >4 |
■ KLD Series Linear Response MCT Detectors
| ◆Linear responsivity ◆High D* ◆Sizes 2.0 mm to 0.5 mm ◆Integral amplifier for optimum linearization ◆Spectral range 2 m m to 12 m m ◆Amplifiers matched for power range ◆Custom configurations available |
| Model * | Wavelength (μm) Peak / Cutoff | Size(mm dia.) | Bandwidth(Hz) | D*(60FOV) (Jones，typ) | Responsivity (Volts/mWatt) |
| KLD-1-J1-3/11 | 10.5 / 11.5 | 1 | 2M | 4.00E+10 | >40 |
| KLD-1-J1-3/9 | 7.6 / 8.5 | 1 | 2M | 6.00E+10 | >32 |
| KLD-0.5-J1-3/10/DC | 9 /10 | 0.5x0.5 | DC - 5M | 8.00E+10 | >40 |
| KLD-0.5-J1-3/11/DC | 10 / 11.5 | 0.5x0.5 | DC - 5M | 4.00E+10 | >40 |
| KLD-2-J1-3/11/DC | 10.5 / 11.5 | 2 | DC - 1M | 4.00E+10 | >40 |
■ MCT Photodiodes with Integral Amplifiers
| ◆High D* at high frequencies ◆Bandwidth to 100 MHz ◆Fast risetime: 3.5 ns ◆Sizes 2.0 mm to 0.1 mm ◆Wavelength cutoff: 11.5， 8， 4.5 μm ◆Linear ◆Custom configurations available |
| Model * | Wavelength (μm ) Peak / Cutoff | Size (mm dia.) | Bandwidth (Hz)AC DC | D*(60FOV) (Jones，typ) | Responsivity (Volts/mWatt) |
| KMPV11-1-J1/AC | 10.5 /> 11.5 | 1 | 100-20M | 3.00E+10 | >40 |
| KMPV11-1-J1/DC | 10.5/ > 11.5 | 1 | DC - 20M | 3.00E+10 | >40 |
| KMPV11-1-J2 | 10.5/ > 11.5 | 1 | 100-20M DC - 20M | 3.00E+10 | >40DC + 80AC |
| KMPV8-0.5-J2/50 | 7.2 / >8 | 0.5 x 0.5 | 100-50M DC - 50M | 6.00E+10 | >16DC + 32AC |
| KMPV8-0.5-J1/DC50 | 7.2 / >8 | 0.5 x 0.5 | DC - 50M | 6.00E+10 | >16 |
| KMPV11-0.5-J1/DC | 10.5 / >11.5 | 0.5 x 0.5 | DC - 20M | 3.00E+10 | >40 |
| KMPV8-0.5-J1/DC | 7.2 / >8 | 0.5 x 0.5 | DC - 20M | 6.00E+10 | >40 |
| KMPV11-0.1-J1/DC100 | 10.1 / >11 | 0.1 x 0.1 | DC - 100M | 2.00E+10 | >16 |
■ Series KISD InSb Photodiodes
◆With or without integral low noise amplifiers
◆Fast rise times: 25 ns， 7 ns
◆Linear response with power
◆High detectivity
◆Custom configurations available
| Model* | Size (mm dia.) | Bandwidth (Hz)AC DC | D*(60FOV) (Jones， typ) | Responsivity nominal |
| KISD-1-A-6 | 1 | 1.50E+11 | 3 A/W | |
| KISD -2-A-6 | 2 | 1.50E+11 | 3 A/W | |
| KISD-0.5-A-6 | 0.5 | 1.50E+11 | 3 A/W | |
| KISDP-1-J1/AC | 1 | 100-15M | 1.50E+11 | 3 x 104 V/W |
| KISDP-1-J1/DC | 1 | 15M | 1.50E+11 | 3 x 104 V/W |
| KISDP-1-J2 | 1 | 100-15M ， 15M | 1.50E+11 | 3 x 104 V/W |
| KISDP-1-J2/E5 | 1 | 100-1.5M ， 1.5M | 1.50E+11 | 3 x 105 V/W |
| KISDP-1-J2/E6 | 1 | 100-200k， 200k | 1.50E+11 | 3 x 106 V/W |
| KISDP-1-J1/E6 | 1 | 200k | 1.50E+11 | 3 x 106 V/W |
